4.6 Article

Switching Mechanism and the Scalability of Vertical-TFETs

期刊

IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 65, 期 7, 页码 3065-3068

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2831688

关键词

Heterojunction; interlayer tunnel; field-effect transistor (TFET); nonequilibrium Green's function; quantum transport; scaling; TFET; transition metal dichalcogenide; vertical TFET (v-TFET)

资金

  1. Center for Low Energy Systems Technology
  2. Semiconductor Research Corporation Program through the Microelectronics Advanced Research Corporation and Defense Advanced Research Projects Agency

向作者/读者索取更多资源

In this brief, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2-D transition metal dichalcogenide materials are studied by atomistic quantum transport simulations. The switching mechanism of a v-TFET is found to be different from previous predictions. As a consequence of this switching mechanism, the extension region where the materials are not stacked over is found to be critical for turning off the v-TFET. This extension region makes the scaling of v-TFETs challenging. In addition, due to the presence of both positive and negative charges inside the channel, v-TFETs also exhibit negative top gate capacitance. As a result, v-TFETs have good energy-delay products and are one of the promising candidates for low-power applications.

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