期刊
JOURNAL OF APPLIED PHYSICS
卷 117, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4906107
关键词
-
资金
- Research Grants Council of Hong Kong [AoE/P-03/08, N_CUHK405/12]
- CUHK
- National Science Foundation of China [61229401]
The effects of oxygen-plasma treatment on solution-processed Al2Ox gate dielectrics for InGaZnOx (IGZO) thin film transistors (TFTs) are investigated in this paper. Thin films of amorphous Al2Ox are successfully fabricated by annealing temperature of 300 degrees C. Utilizing oxygen-plasma treated gate dielectrics, combustion-processed IGZO TFTs, which are annealed at a temperature of 300 degrees C, show a mobility of 7.3 cm(2) V-1 s(-1), a threshold voltage of -0.3 V, an on-off current ratio of 1 x 10(5), a subthreshold swing of 160 mV/decade, when operating with a voltage ranging from -2 V to +5 V. Our experimental results demonstrate that oxygen-plasma treatment can remarkably improve dielectric performance. This is presumably due to the passivation of interfacial and bulk traps, and the reduced concentration of oxygen vacancies. (C) 2015 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据