Novel Time-Domain Schottky Diode Modeling for Microwave Rectifier Designs

A novel modeling methodology of Schottky diode for microwave rectifier design is proposed in this paper. The challenge was to consider the effective capacitance of the diode under different status being usually ignored in previous works. In addition, the charging and discharging behaviors causing extra power consumption had been considered for a higher modeling accuracy. To improve the diode modeling, Kirchhoff current and charge conservation law are utilized to analyze the charge and discharge effects and synthesize the corresponding close-form equations. Based on these equations, once the diode model, operating frequency, output dc current are determined, the optimal performance prediction for the diode, load value selection, and impedance matching design can be implemented accordingly. For validation, the proposed modeling methodology is compared with the commercial simulation software advanced design system and other related works. For further verification, a compact single diode rectifier operating at 5.8 GHz is designed, fabricated, and measured. Good agreement between the calculated, simulated, and measured data can be obtained, demonstrating the effectiveness of proposed method.