期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 30, 期 4, 页码 399-402出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2018.2793663
关键词
Mid-infrared optoelectronics; type-II multiple quantum wells; p-i-n photodiode; optical communications; GaAsSb; InGaAs
资金
- National Science Foundation [1307853]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1307853] Funding Source: National Science Foundation
We present and discuss the performance characteristics of InP-based p-i-n photodiodes (PDs) with InGaAs/GaAsSb type-II multiple quantum wells absorption regions designed to absorb light at mid-infrared wavelengths. Top-illuminated and waveguide-integrated PDs are fabricated with dark currents as low as 100 nA at -2 V, an external responsivity as high as 0.27 A/Wat 2 mu m and 0.3 A/Wat 1.55 mu m, and a 3-dB bandwidth of 3.5 GHz at 2 mu m.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据
分享论文
