期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 24, 期 6, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2018.2832654
关键词
CMOS; III-V; Laser; Silicon Photonics
资金
- European Union's Horizon 2020 Research and Innovation Program [688003, 688172, 688544]
- ERC Starting-Grant Project [678567]
- Swiss National Secretariat for Education, Research and Innovation [15.0313, 15.0339, 15.0346]
CMOS-compatible III-V lasers integrated on silicon are a crucial step to reduce power consumption and cost for nextgeneration optical transceivers. Here, we demonstrate a concept to co-integrate III-V lasers into a CMOS Silicon Photonics platform, in which lasers, photonics, and electronic circuitry share the same back end of line. Based on a bonded III-V epitaxial layer stack, ultra-thin laser devices, optically pumped lasing and coupling to silicon are demonstrated. Furthermore, we present all building blocks for electrically pumped laser devices.
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