期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 24, 期 2, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2017.2712625
关键词
Photodetectors; optoelectronic devices; photonic integrated circuits
资金
- Defense Advanced Research Projects Agency Microsystems Technology Office through the DODOS [HR0011-15C-055]
High-speed InP-based modified uni-traveling carrier photodiodes with top p-contact on silicon-on-insulator nanowaveguides are reported. The photodiodes have low dark current (1 nA), high bandwidth (65 GHz), and deliver record-high RF output power at 70 GHz (-2 dBm at 20 mA). Balanced and traveling-wave photodiodes of this type have bandwidths of 20 and 35 GHz, respectively.
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