期刊
IEEE ELECTRON DEVICE LETTERS
卷 39, 期 9, 页码 1354-1357出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2856920
关键词
Diamond; FETs; transfer doping; V2O5
资金
- Engineering and Physical Sciences Research Council [EP/E054668/1]
- EPSRC [EP/E054668/1] Funding Source: UKRI
We report on the performance enhancement of 250-nm gate-length H-diamond FETs through thermal treatment of devices at 400 degrees C and the incorporation of V2O5 as a surface electron acceptor layer. Encapsulation of the H-diamond surface with V2O5 is found to increase the transfer doping efficiency and reduce the device access resistance. A reduction in ohmic contact resistance and channel resistance beneath the gate after thermal treatment at 400 degrees C was found to further reduce the device oN-resistance and increase the maximum drain current and peak transconductance. These devices demonstrate the highest drain current (375 mA/mm) and transconductance (98 mS/mm), yet reported for H-diamond FETs of this gate length that incorporate an electron acceptor oxide layer.
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