期刊
IEEE ELECTRON DEVICE LETTERS
卷 39, 期 7, 页码 971-974出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2839267
关键词
Flexible electronics; oxide thin film transistor; mechanical stress; bending stability; neutral plane
资金
- Industry Technology Research and Development Program of Ministry of Trade, Industry and Energy (MOTIE) [10051080]
- Korea Display Research Corporation [10051403, 10052020]
- Future Semiconductor Device Technology Development Program through MOTIE
- Korea Semiconductor Research Consortium [10067739]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10067739, 10052020, 10051403] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We investigated the effects of repetitive mechanical bending stress on top-gate amorphous InGaZnO thin-film transistors (TFTs). Electrical parameters were gradually degraded under repetitive tensile bending stress. After 50 000 bending cycles, some TFTs showed gate leakage current increase during positive gate bias thermal stress. After 60 000 bending cycles, conduction path was physically severed to an open state. However, when an additional organic layer was deposited on the TFTs as a stress-reduction layer, device characteristics were unaffected by repetitive mechanical stress up to 100 000 cycles. Finite element structural simulations show the vulnerable stress-concentrated regions that cause leakage current, contact resistance increase, and interface traps. Electrical deterioration under repetitive bending is significantlymitigated by applying a stress-reduction layer.
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