期刊
IEEE ELECTRON DEVICE LETTERS
卷 39, 期 7, 页码 1007-1010出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2835517
关键词
GaN; HEMT; N-polar; hot-electron; impact ionization
资金
- ONR through GaN HEMT Reliability Physics: From Failure Mechanisms to Testing Methods, Test Structures, and Acceleration Laws [N000141410647]
- ONR
This letter reports on the observation of hot-electron and impact-ionization mechanisms in N-polar GaN-based MIS-HEMTs designed for high frequency (RF) operation. Thanks to the extremely low gate leakage of such devices, we were able to demonstrate-for the first time-a correlation between electroluminescence (EL) and gate current in the semi-on state. In the semi-on state, the devices show a non-monotonic, bell-shaped behavior of the EL-versus-V-GS and of the I-G-versus-V-GS characteristics, and the intensity of the EL signal is proportional to the I-G x I-D product. The results are experimental evidence for impact ionization: the related mechanisms are described in detail in the letter.
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