期刊
IEEE ELECTRON DEVICE LETTERS
卷 39, 期 7, 页码 999-1002出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2833883
关键词
p-GaN; HEMT; backgating effect; GaN-on-SOI; half-bridge; monolithic integration
资金
- Electronic Component Systems for European Leadership Joint Undertaking through the Project PowerBase [662133]
- European Union's Horizon 2020 Research and Innovation Programme
The backgating effect on trench-isolated enhancement-mode p-GaN devices fabricated on 200-mm GaN-on-SOI was investigated. We show that to minimize the backgating effect in the monolithically integrated half-bridge, the sources of both the low side and high side need to be connected to their respective fully isolated Si(111) device layers to keep the substrates and the sources at equipotential.
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