期刊
IEEE ELECTRON DEVICE LETTERS
卷 39, 期 7, 页码 955-958出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2833149
关键词
Resistive switching; RRAM; over-reset; defect profile; random telegraph noise; Ta2O5; HfO2
资金
- EPSRC, U.K. [EP/M006727/1, EP/M00662X/1, EP/M009297/1]
- EPSRC [EP/M00662X/1, EP/M009297/1, EP/M006727/1, EP/P005152/1] Funding Source: UKRI
Despite the tremendous efforts in the past decade devoted to the development of filamentary resistive-switching devices (RRAM), there is still a lack of in-depth understanding of its over-reset phenomenon. At higher reset stop voltages that exceed a certain threshold, the resistance at high resistance state reduces, leading to an irrecoverablewindow reduction. The over-reset phenomenon limits the maximum resistance window that can be achieved by using a higher V-reset, which also degrades its potential in applications such as multi-level memory and neuromorphic synapses. In this letter, the over-reset is investigated by cyclic reset operations with incremental stop voltages, and is explained by defect generation in the filament constriction region of Ta2O5 RRAM devices. This is supported by the statistical spatial defects profile obtained from the random telegraph noise based defect probing technique. The impact of forming compliance current on the over-reset is also evaluated.
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