期刊
IEEE ELECTRON DEVICE LETTERS
卷 39, 期 5, 页码 664-667出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2821162
关键词
Self-rectifying RRAM; CMOS-compatible; sneaking current
资金
- MOST of China [2016YFA0203800, 2016YFA0201803]
- National Natural Science Foundation of China [61522408, 61334007, 61521064]
- Opening Project of the Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences [Y7YS083007, Y7YS063005]
The self-rectifying resistive-switching (RS) device is one of the most promising solutions to overcome the sneaking current issue in a 3D vertical crossbar array. In this letter, we report a CMOS-compatible, forming-free, self-rectifying resistive random accessmemory device with high uniformity and low operation voltage (<3 V) for embeddedmemory application. Thanks to the lowread voltage, this device shows robust read disturbance (> 10(9)) characteristics. After introducing a 3-nm HfO2 thin film between Pd and WOx layer, Schottky contact of Pd/HfO2 was formed, which resulted in rectifying property. The HfO2 layer also served as an oxygen reservoir for RS in WOx layer. This novel memory device with excellent performance is a promising candidate for future high density embedded memory application.
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