Solution Processed Organic Transistor Nonvolatile Memory With a Floating-Gate of Carbon Nanotubes

In this letter, an organic field-effect transistor nonvolatile memory (NVM), based on single-walled carbon nanotubes (SWNTs) as a nano floating-gate, is demonstrated, for which a four-layer stacked core architecture was processed by following the sequential solution spin-coating method. The SWNTs, separated by spin-coating, are distributed in the matrix of copolymer poly (styrene-block-paraphenylene) to act as the charge trapping sites. The memory of the floating-gate organic transistor so prepared exhibits excellent NVM characteristics, with a large memory window of 26.7 V, memory on/off ratio larger than 103, stable charge storage retention capability for over 3 x 10(4) s with a memory on/off ratio over 10(2), and the reliable memory endurance property of over 500 Hz.