期刊
IEEE ELECTRON DEVICE LETTERS
卷 39, 期 1, 页码 111-114出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2774826
关键词
Organic field-effect transistor; floating-gate; nonvolatile memory; successive solution processing
资金
- Henan Polytechnic University [T2015-3]
- Natural Science Foundation of Jilin Province in China [20160101256JC]
In this letter, an organic field-effect transistor nonvolatile memory (NVM), based on single-walled carbon nanotubes (SWNTs) as a nano floating-gate, is demonstrated, for which a four-layer stacked core architecture was processed by following the sequential solution spin-coating method. The SWNTs, separated by spin-coating, are distributed in the matrix of copolymer poly (styrene-block-paraphenylene) to act as the charge trapping sites. The memory of the floating-gate organic transistor so prepared exhibits excellent NVM characteristics, with a large memory window of 26.7 V, memory on/off ratio larger than 103, stable charge storage retention capability for over 3 x 10(4) s with a memory on/off ratio over 10(2), and the reliable memory endurance property of over 500 Hz.
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