期刊
IEEE ELECTRON DEVICE LETTERS
卷 39, 期 1, 页码 47-50出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2779816
关键词
Sol-gel; CuO; thin film transistors; photocurrent
资金
- Basic Science Research Program through the National Research Foundation of Korea from the Ministry of Education [NRF-2016R1D1A3B03930896]
Solution-p-type thin-film transistors, consisting of sol-gel-processed CuO films, were fabricated. The optoelectric properties of sol-gel-processed, CuO-based back gate thin-film transistors were investigated, and a detectivity of 1.38 x 10(11) (cm Hz(1/2) W-1) was achieved. This detectivity for sol-gel-processed CuO thin-film transistors is higher than that of the previously reported layered two-dimensional material systems and comparable to that of devices based on a one-dimensional nanowire system. Our results indicate that the sol-gel-processed, CuO-based photodetector system is a promising candidate for applications, such as near-infrared imaging devices, sensors, solar cells, and p-type inks for future printed electronics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据