4.6 Article

Enhanced Sheet Charge Density in DIBS Grown CdO Alloyed ZnO Buffer Based Heterostructure

期刊

IEEE ELECTRON DEVICE LETTERS
卷 39, 期 6, 页码 827-830

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2829761

关键词

ZnOheterostructure; sheet charge density; dual ion beam sputtering (DIBS); 2-DEG

资金

  1. DST SERB [EMR/2016/006847]
  2. Ministry of Electronics and Information Technology (MeitY), Government of India
  3. Council of Scientific and Industrial Research
  4. MeitY, Government of India

向作者/读者索取更多资源

In this letter, we report on achieving significantly high (similar to 6x) sheet charge density (n(s)) in MgZnO/CdZnO heterostructure, as compared with that in MgZnO/ZnO, at lower Mg (<= 0.15) compositions in barrier MgZnO layer, with both heterostructures grown by dual ion beam sputtering technique. Buffer CdZnO and barrier MgZnO layers are probed separately to investigate carrier density in defect prone sputtered layers. Capacitance-voltage measurement and temperature-dependent Hall measurement confirm the presence of quantum confined carrier density at barrier-buffer interface, suggesting that the enhancement in carrier densities in the heterostructure over individual layers is probably due to the formation of 2-D electron gas (2-DEG).

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据