期刊
IEEE ELECTRON DEVICE LETTERS
卷 39, 期 6, 页码 827-830出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2829761
关键词
ZnOheterostructure; sheet charge density; dual ion beam sputtering (DIBS); 2-DEG
资金
- DST SERB [EMR/2016/006847]
- Ministry of Electronics and Information Technology (MeitY), Government of India
- Council of Scientific and Industrial Research
- MeitY, Government of India
In this letter, we report on achieving significantly high (similar to 6x) sheet charge density (n(s)) in MgZnO/CdZnO heterostructure, as compared with that in MgZnO/ZnO, at lower Mg (<= 0.15) compositions in barrier MgZnO layer, with both heterostructures grown by dual ion beam sputtering technique. Buffer CdZnO and barrier MgZnO layers are probed separately to investigate carrier density in defect prone sputtered layers. Capacitance-voltage measurement and temperature-dependent Hall measurement confirm the presence of quantum confined carrier density at barrier-buffer interface, suggesting that the enhancement in carrier densities in the heterostructure over individual layers is probably due to the formation of 2-D electron gas (2-DEG).
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