期刊
IEEE ELECTRON DEVICE LETTERS
卷 39, 期 6, 页码 869-872出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2830184
关键词
beta-Ga2O3; HVPE; breakdown voltage; MISFET; MOSFET; FinFET; enhancement mode; vertical transistor; power electronics
资金
- NSF DMREF Program [1534303]
- AFOSR [FA9550-17-1-0048]
High-voltage vertical Ga2O3 MISFETs are developed employing halide vapor phase epitaxial (HVPE) layers on bulk Ga2O3 (001) substrates. The low charge concentration of similar to 10(16) cm(-3) in the n-drift region allows three terminal breakdown voltages to reach up to 1057 V without field plates. The devices operate in the enhancement mode (E-mode) with a threshold voltage of similar to 1.2-2.2V, a current on/off ratio of similar to 108, an on resistance of similar to 13-18m Omega.m(2), and an output current of > 300 A/cm(2). This is the first report of high-voltage vertical Ga2O3 transistors with E-mode operation, a significant milestone toward realizing Ga2O3 based power electronics.
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