4.6 Article

Mn2+ Doped Mg-Zn Ferrite Nanoparticles for Microwave Device Applications

期刊

IEEE ELECTRON DEVICE LETTERS
卷 39, 期 6, 页码 901-904

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2829926

关键词

Ferrites; dielectric constant; loss tangent; microwave devices

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We report the frequency-and temperature-dependent dielectric behavior of Mn2+ doped Mg0.5Zn0.5-xMnxFe2O4(x = 0.125, 0.250, 0.375, 0.500) nanoferrites synthesized using co-precipitation route. Dielectric constant decreases sharply at low frequencies in comparison to higher frequencies. Loss tangent has been observed to be small for all samples. The temperature-dependent dielectric study for prepared samples shows dielectric relaxation at higher temperatures (531-667 K). This has been attributed to the dipolar and interfacial polarization. Low values of loss tangent of investigated nanoferritesmake them potential candidates for microwave device applications.

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