期刊
IEEE ELECTRON DEVICE LETTERS
卷 39, 期 1, 页码 151-154出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2773599
关键词
PtSe2; field-effect transistors; quantum transport; non-equilibrium Green's function
资金
- NSERC [RGPIN-05920-2014, STPGP 478974-15]
- WIN Nanofellowship
PtSe2, a new family of transition metal dichalcogenides, has been explored for electronic device applications using density functional theory and non-equilibrium Green's function within the third nearest neighbor tight-binding approximation. Interestingly, despite its small effective mass (m(e)* as low as 0.21m(0); m(0) being electron rest mass), PtSe2 has large density of states due to its unique six-valley conduction band within the first Brillouin zone, unlike MoX2 family. This has direct impacts on the device characteristics of PtSe2 field-effect transistors, resulting in superior on-state performance (30% higher on current and transconductance) as compared with the MoSe2 counterpart. Our simulation shows that the PtSe2 device with a channel longer than 15 nm exhibits near-ideal subthreshold swing, and sub-100 mV/V of drain-induced barrier lowering can be achieved with an aggressively scaled gate oxide, demonstrating new opportunities for electronic devices with novel PtSe2.
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