L-g=30 nm InAs Channel MOSFETs Exhibiting f(max)=410 GHz and f(t)=357 GHz

We report L-g = 30 nm InAs-channel MOSFETs exhibiting 420 GHz f(max), record for a III-V MOSFET, and 357 GHz f(t). The device incorporates a 5-nm strained InAs channel grown on an InP substrate. To reduce the parasitic gate-source and gate-drain capacitances, regrown lateral access regions increase the separations between the gate and the N+ source and drain; modulation doping within these access regions provides a low associated series resistance, enabling high gm. The 30 nm L-g device shows an 1.5 mS/mu m DC peak extrinsic g(m) at V-DS = 0.5 V and V-GS = 0.3 V, 91% of the value (1.65 mS/mu m) extracted from 10 MHz RF measurements, indicating a low DC-RF dispersion.