期刊
IEEE ELECTRON DEVICE LETTERS
卷 39, 期 4, 页码 528-531出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2805192
关键词
Efficiency droop; GaN light-emitting diodes (LEDs); Auger recombination; electron leakage
资金
- National Natural Science Foundation of China [61504050, 11604124]
- Fundamental Research Funds for the Central Universities [JUSRP51628B]
- 111 Project [B12018]
The temperature-dependent efficiency droop in InGaN/GaN blue light-emitting diodes (LEDs) has been evaluated. Carrier freeze-out in p-GaN has a strong influence on forward current transport, leading to limited hole density and non-uniform distribution among the quantum wells. Auger recombination is primarily responsible for the observed LED-efficiency droop for temperatures T > 200 K. However, at lower temperatures, electron scan readily tunnel into the p-GaN side to directly compensate Mg acceptors, due to enhanced Coulomb screening. This reduces hole ionization and the emission efficiency. Experimental data agree well with a theoretical model, confirming the dominant role of leakage for the low-temperature efficiency droop.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据