期刊
IEEE ELECTRON DEVICE LETTERS
卷 39, 期 2, 页码 312-315出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2789425
关键词
Neuromorphic system; conductive-bridging RAM (CBRAM); synaptic device; linear conductance
资金
- Future Semiconductor Device Technology Development Program through the Ministry of Trade, Industry and Energy (MOTIE)
- Korea Semiconductor Research Consortium (KSRC) [10045085]
- MOTIE [10067794]
- KSRC
- Korea Evaluation Institute of Industrial Technology (KEIT) [10045085, 10067794] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
In this letter, we demonstrate the conductive-bridging RAM (CBRAM) with excellent multi-level cell (MLC) and linear conductance characteristics for an artificial synaptic device of neuromorphic systems. Our findings show that inherent characteristics of CBRAM can achieve the linear conductance and MLC characteristics as a product of an integer unit of the conductance. However, uncontrolled metal-ion injection into the switching layer results in a significant degradation of device uniformity, leading to degradation in the classification accuracy. Thus, we introduce a multi-layer CBRAM configuration (Cu/HfO2/Ta/Cu2S/W) to control the ionic motion in electrolytes. As a result of device engineering, highly improved classification accuracy is achieved using CIFAR-10 data set.
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