期刊
JOURNAL OF APPLIED PHYSICS
卷 117, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4917566
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资金
- China Postdoctoral Science Foundation [2013M540437]
- Natural Science Foundation of Jiangsu Province [BK2012110]
- Fundamental Research Funds for the Central Universities [JUSRP51323B, JUDCF13038]
- Graduate Student Innovation Program for University of Jiangsu Province [CXLX13-740]
- Summit of the Six Top Talents Program of Jiangsu Province [DZXX-053]
Lattice-matched Pt/Au-In0.17Al0.83N/GaN hetreojunction Schottky diodes with circular planar structure have been fabricated and investigated by temperature dependent electrical measurements. The forward and reverse current transport mechanisms are analyzed by fitting the experimental current-voltage characteristics of the devices with various models. The results show that (1) the forward-low-bias current is mainly due to the multiple trap-assisted tunneling, while the forward-high-bias current is governed by the thermionic emission mechanism with a significant series resistance effect; (2) the reverse leakage current under low electric fields (<6 MV/cm) is mainly carried by the Frenkel-Poole emission electrons, while at higher fields the Fowler-Nordheim tunneling mechanism dominates due to the formation of a triangular barrier. (C) 2015 AIP Publishing LLC.
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