期刊
JOURNAL OF SEMICONDUCTORS
卷 36, 期 7, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1674-4926/36/7/075001
关键词
LNA; pHEMT; Miller effect; gradual inductor
资金
- External Cooperation Program of BIC, Chinese Academy of Sciences [172511KYSB20130108]
A two-stage monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) fabricated in 0.5 mu m GaAs pHEMT is presented. The Miller effect introduced by the parasitic gate-drain capacitance is utilized to decrease the value of the input inductor. Additionally, the input on-chip inductor is a novel high Q gradual structure. The noise figure is reduced with these two methods. With good input and output matching, the LNA achieves a noise figure of 0.75 dB and a small signal gain of 32.7 dB over 698-806 MHz. The input 1 dB compression point is -21.8 dBm and the input third order interception point is -10 dBm.
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