期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 33, 期 4, 页码 -出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.4923236
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资金
- National Research Foundation of Korea (NRF) grant - Korea government (MSIP) [2014-005368]
- National Research Foundation of Korea [2014R1A2A2A05005368] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The authors demonstrate the enhancement mode p-type SnO thin-film transistors (TFTs) using dual gate (DG) structures. The cross-linked polyvinyl alcohol dielectric with a polymethylmethacrylate buffer layer is formed as a top gate (TG) insulator of the DG SnO TFT. The fabricated DG SnO TFT exhibits better electrical performances than the bottom gate (BG) and TG SnO TFTs including higher field-effect mobility and smaller subthreshold slope. In fabricated DG TFTs, the threshold voltage (V-th) of the BG TFT is linearly modulated by the voltage applied to the TG electrode. The BG transfer curve exhibits a depletion mode operation when measured while TG is grounded, but operates in the enhancement mode with a negative V-th (= -0.9 V) when a positive bias of 10 V is applied to the TG electrode. The enhancement mode operation of p-type SnO TFTs can increase the output voltage swing range and decreases the off-stage leakage currents of the complementary logic circuits. (C) 2015 American Vacuum Society.
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