期刊
ELECTRONIC MATERIALS LETTERS
卷 14, 期 2, 页码 125-132出版社
KOREAN INST METALS MATERIALS
DOI: 10.1007/s13391-018-0016-3
关键词
Titanium dioxide; Dielectric/metal/dielectric; Silver; Transparent conductive oxide; Sputtering; Thin films
资金
- International Science and Business Belt Program through the Ministry of Science, ICT and Future Planning [2017K000488]
- Technology Innovation Program - Ministry of Trade, Industry and Energy [10048568]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10048568] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2017K000488] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Transparent conducting oxides attract intense interests due to its diverse industrial applications. In this study, we report sapphire substrate-based TiO2/Ag/TiO2 (TAT) multilayer structure of indium-free transparent conductive multilayer coatings. The TAT thin films were deposited at room temperature on sapphire substrates and a rigorous analysis has been presented on the electrical and optical properties of the films as a function of Ag thickness. The optical and electrical properties were mainly controlled by the Ag mid-layer thickness of the TAT tri-layer. The TAT films showed high luminous transmittance similar to 84% at 550 nm along with noteworthy low electrical resistance similar to 3.65 x 10(-5) Omega-cm and sheet resistance of 3.77 Omega/square, which is better are than those of amorphous ITO films and any sapphire-based dielectric/metal/dielectric multilayer stack. The carrier concentration of the films was increased with respect to Ag thickness. We obtained highest Hackke's figure of merit 43.97 x 10(-3) Omega(-1) from the TAT multilayer thin film with a 16 nm thick Ag mid-layer. [GRAPHICS] .
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