期刊
JOURNAL OF APPLIED PHYSICS
卷 118, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4930222
关键词
-
资金
- BPI France through the Projet Investissement d'Avenir (PIA) Tours
The resistivity of p type porous silicon (PS) is reported on a wide range of PS physical properties. Al/PS/Si/Al structures were used and a rigorous experimental protocol was followed. The PS porosity (P-%) was found to be the major contributor to the PS resistivity (rho(PS)). rho(PS) increases exponentially with P-%. Values of rho(PS) as high as 1 x 10(9) Omega cm at room temperature were obtained once P-% exceeds 60%. rho(PS) was found to be thermally activated, in particular, when the temperature increases from 30 to 200 degrees C, a decrease of three decades is observed on rho(PS). Based on these results, it was also possible to deduce the carrier transport mechanisms in PS. For P-% lower than 45%, the conduction occurs through band tails and deep levels in the tissue surrounding the crystallites. When P-% overpasses 45%, electrons at energy levels close to the Fermi level allow a hopping conduction from crystallite to crystallite to appear. This study confirms the potential of PS as an insulating material for applications such as power electronic devices. (C) 2015 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据