Optimization of preparation technology of ZnO and ZnO: Al thin films for solar cell applications

ZnO and ZnO: Al thin films of about 100 nm thicknesses were deposited by magnetron sputtering method at 200-400 degrees C substrate temperatures under oxygen/argon gas mixture with different O/Ar ratio (0-6 % O-2). The higher crystallinities for ZnO: Al and ZnO films are achieved at 400 degrees C substrate temperature under 0 % and 4 % (O/Ar) mixture ratios, respectively. The films were characterized by X-ray diffraction (XRD), spectroscopic ellipsometery (SE), photoluminescence spectroscopy, and atomic force microscopy (AFM) methods. Electrical, optical, and luminescent properties depending on crystallinities of the obtained films were studied.