Thin film growth of Cd1-xZnxTe and its application to X-ray sensor

Cd1-xZnxTe (x similar to 0.5) thin films with less than 300 mu m are grown on ITO/glass substrate by Hot-wall and PVT methods, one of the sublimation methods. In order to obtain the films with high resistivity and good quality for X-ray sensor, three attempts have been tried in the experiments. The one is stoichiometry control of CZT (x=0.04) films, which were grown under controlled Cd vapor pressure. The second is excess chlorine doping to the films (x=0.04) by controlling CdCl2 vapor pressure during growth process. The third is to change composition x=0.04-0.50, which increases band gap. Through these methods, best films with good X-ray response was obtained for the third case of the films with the composition x=0.20.