期刊
5TH INTERNATIONAL CONFERENCE ON SILICON PHOTOVOLTAICS, SILICONPV 2015
卷 77, 期 -, 页码 651-657出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.egypro.2015.07.094
关键词
modeling; Voc gains; localised emitters; silicon solar cell; modeling
A limited area p-n junction approach can increase the open circuit voltage (Voc) of silicon solar cells when the emitter recombination dominates. A limited area p-n junction silicon solar cell is designed and the effect of reducing emitter areas on the Voc, short circuit current (Jsc) and fill factor (FF) is studied using the 3-D simulator Quokka. This paper compares the modelling result of this approach on structures with different values of emitter recombination. It is concluded that voltage improvement can be achieved when the emitter dominates the total recombination. The result also shows that the current collection and FF can be maintained with an optimized unit cell design. The paper also extends the approach to thin (20 mu m) solar cells, demonstrating the potential for Voc values up to 770 mV when excellent surface passivation is employed. (C) 2015 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
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