4.4 Article

X-ray scattering study on the electric field-induced interfacial magnetic anisotropy modulation at CoFeB / MgO interfaces

期刊

CURRENT APPLIED PHYSICS
卷 18, 期 11, 页码 1212-1217

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.cap.2018.05.003

关键词

Spintronics; Magnetic anisotropy; X-ray scattering; Electric field control of magnetism

资金

  1. National Research Council of Science and Technology grant [CAP-16-01-KIST]
  2. KIST Institutional Program [2E28190]

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The electric field-induced modifications of magnetic anisotropy in CoFeB/MgO systems are studied using X-ray resonant magnetic scattering and magneto-optical Kerr effect. Voltage dependent changes of the magnetic anisotropy of -12.7 fJ/Vm and - 8.32 fJ/Vm are observed for Ta/CoFeB/MgO and Hf/CoFeB/MgO systems, respectively. This implies that the interfacial perpendicular magnetic anisotropy is reduced (enhanced) when electron density is increased (decreased). X-ray resonant magnetic scattering measurements reveal that the small in-plane magnetic component of the remanent state of CoFeB/MgO systems with weak magnetic anisotropy changes depending on the applied voltage leading to modification of the magnetic anisotropy at the CoFeB/MgO interface.

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