期刊
JOURNAL OF SENSORS AND SENSOR SYSTEMS
卷 4, 期 2, 页码 249-253出版社
COPERNICUS GESELLSCHAFT MBH
DOI: 10.5194/jsss-4-249-2015
关键词
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资金
- State Committee of Science of Armenia
- NATO SFP [984597]
This work presents the results of investigations of a low bias mid-infrared(IR) photoconductive cell (PCC) with InAsSbP quantum dots (QDs). The self-assembled nanostructures were grown on an InAs(100) substrate by modified liquid phase epitaxy. The coarsening of the QDs due to Ostwald ripening was discussed. Hysteresis with a remnant capacitance of 0.483 pF and contra-directional oscillations on the PCC's capacitance-voltage characteristic at 78K were observed. Additionally, peaks at 3.48, 3.68 and 3.89 mu m on the room temperature photoresponse spectrum of a quantum dot photoconductive cell were detected. Room temperature photosensing properties were investigated under an irradiation of 3.39 mu m as well. At a power density of 0.07 W cm(-2), the surface resistance of quantum dot PCC was reduced by up to 7 %. A current responsivity of 0.2 mA W-1 was measured at an applied voltage of 8 mV.
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