Properties of n-type SnO2 semiconductor prepared by spray ultrasonic technique for photovoltaic applications

Transparent conducting n-type SnO2 semiconductor films were fabricated by employing an inexpensive, simplified spray ultrasonic technique using an ultrasonic generator at deferent substrate temperatures (300, 350, 400, 450 and 500 degrees C). The structural studies reveal that the SnO2 films are polycrystalline at 350, 400, 450, 500 degrees C with preferential orientation along the (200) and (101) planes, and amorphous at 300 degrees C. The crystallite size of the films was found to be in the range of 20.9-72.2 nm. The optical transmittance in the visible range and the optical band gap are 80% and 3.9 eV respectively. The films thicknesses were varied between 466 and 1840 nm. The resistivity was found between 1.6 and 4 x 10(-2) Omega center dot cm. This simplified ultrasonic spray technique may be considered as a promising alternative to a conventional spray for the massive production of economic SnO 2 films for solar cells, sensors and opto-electronic applications.