期刊
JOURNAL OF MATERIOMICS
卷 1, 期 4, 页码 285-295出版社
ELSEVIER
DOI: 10.1016/j.jmat.2015.07.009
关键词
Resistive random access memory (RRAM); Material selection; Mechanism; Computational material science
资金
- National Natural Science Foundation for Distinguished Young Scientists of China [51225205]
- National Natural Science Foundation of China [61274005, 37691801]
Resistive random access memory (RRAM) is a very promising next generation non-volatile RAM, with quite significant advantages over the widely used silicon-based Flash memories. For RRAM, material with switchable resistance, working as the storage medium, is the most important part for the performance of the memory. In this review, as a start, some general hints for the materials selection are proposed. Then most recent studies on this emerging memory from the perspective of materials science are summarized: various materials with resistance switch (RS) behavior and the underlying mechanisms are introduced; as a complementary to the previous review articles, here the increasingly important role of computational materials science in the research of RRAM is presented and highlighted. By incorporating the framework of high-throughput calculation and multi-scale simulations, design process of new RRAM could be accelerated and more cost-effective. (C) 2015 The Chinese Ceramic Society. Production and hosting by Elsevier B.V.
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