期刊
INDIAN JOURNAL OF PHYSICS
卷 89, 期 10, 页码 1031-1040出版社
INDIAN ASSOC CULTIVATION SCIENCE
DOI: 10.1007/s12648-015-0678-8
关键词
Chalcogenide; Thin film; Optical properties; Photo-bleaching; Band gap
资金
- Department of Science and Technology (DST), Govt of India
The change in photo-induced optical properties in thermally evaporated Ge12Sb25Se63 chalcogenide thin film under 532-nm laser illumination has been reported in this paper. The structure and composition of the film have been examined by X-ray diffraction and energy dispersive X-ray analysis, respectively. The optical properties such as refractive index, extinction coefficient and thickness of the films have been determined from the transmission spectra based on inverse synthesis method and the optical band gap has been derived from optical absorption spectra using the Tauc plot. It has been found that the mechanism of the optical absorption is due to allowed indirect transition. The optical band gap increases by 0.05 eV causing photo-bleaching mechanism, while refractive index decreases because of reduction in structural disordering. Deconvolution of Raman and X-ray photoelectron spectra into several peaks provides different structural units, which supports the optical photo-bleaching.
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