期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 33, 期 6, 页码 -出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.4933039
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- Samsung Electronics
The reverse bias leakage characteristics of InGaN/GaN light emitting diodes (LEDs) grown on Si (111) were investigated as a function of two factors: (1) bulk depletion width and (2) V-pit size. The reverse leakage current showed a decreasing trend with an increase in V-pit size, given a fixed depletion width. Atomic probe tomography was used to verify that a reduction in electric field near the vicinity of threading dislocations suppresses field-assisted carrier emission, reducing reverse leakage. Calculations using the appropriate theory show a reasonable agreement with the experimental results. These findings further elucidate the role of V-pits as passivation for reverse leakage paths and may be useful for not only LEDs but GaN-based power devices as well. (C) 2015 American Vacuum Society.
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