期刊
RSC ADVANCES
卷 5, 期 124, 页码 102856-102862出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5ra23023c
关键词
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资金
- National Natural Science Foundation of China [51171084, 50871056]
- Zhejiang Provincial Natural Science Foundation [LY14E010003]
- Natural Science Foundation of Ningbo [2014A610016]
Here we present InSe-based alloys InSeSnx (x = 0-0.02) with improved thermoelectric performance upon Sn's preferential occupation on In lattice sites. This improvement is attributed to the enhancement in carrier concentration (n) and reduction in lattice thermal conductivity (kappa(L)). However, the enhancement in n is limited due to the presence of the intermediate band in the middle of the bandgap, which acts as an annihilation center for electrons and holes. The reduction in kL is caused by increased phonon scattering on the newly-created defect Sn-In(+). As a result, we attain the highest ZT value of 0.23 at x = 0.01@830 K, which is about 2.9 times that of virgin InSe.
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