Potential Pulsed Electrodeposition of CuInSe2 Thin Films

Copper indium diselenide (CISe) thin films have been prepared onto ITO glass substrates by a potential pulsed electrodeposition method from a pH = 3.0 buffer solution containing CuCI2, InCl3 and SeO2 as precursors. After applying a series of potential/time pulsed programs it was possible to find specific potential intervals allowing to growing CISe films whose X-ray diffraction patterns showed single phase polycrystalline chalcopyrite structure. Raman spectra analysis of these as grown films confirmed this finding. From optical measurements a bandgap of 1.01 eV was determined. By recording Mott-Schottky plots it was found that the films presented p-type conductivity, a carrier density N-A = 8.54x10(19) cm(-3) and a flatband potential E-FB = 0.35 V.