期刊
CHEMISTRY OF MATERIALS
卷 30, 期 4, 页码 1209-1217出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.chemmater.7b03501
关键词
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资金
- Holst Centre/IMEC-NL, The Netherlands
- European Union's Horizon 2020 research and innovation programme [641864]
- H2020 Societal Challenges Programme [641864] Funding Source: H2020 Societal Challenges Programme
The maximum conductivity achievable in Al-doped ZnO thin films prepared by atomic layer deposition (ALD) is limited by the low doping efficiency of Al. To better understand the limiting factors for the doping efficiency, the three-dimensional distribution of Al atoms in the ZnO host material matrix has been examined on the atomic scale using a combination of high-resolution transmission electron microscopy (TEM) and atom probe tomography (APT). Although the Al distribution in ZnO films prepared by so-called ALD supercycles is often presented as atomically flat delta-doped layers, in reality a broadening of the Al-dopant layers is observed with a full-width-half-maximum of similar to 2 nm. In addition, an enrichment of the Al at grain boundaries is observed. The low doping efficiency for local Al densities > similar to 1 nm(-3) can be ascribed to the Al solubility limit in ZnO and to the suppression of the ionization of Al dopants from adjacent Al donors.
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