期刊
CERAMICS INTERNATIONAL
卷 44, 期 6, 页码 6081-6088出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2017.12.239
关键词
ZnO; Ti doped; RTA; Biosensing; Urea
资金
- Chang Gung University [CMRPD2F0091]
- Ministry of Science and Technology [MOST 104-2221-E-182-042]
In this paper, we demonstrate electrolyte-insulator-semiconductor devices for biochemical sensing applications prepared from ZnO and Ti-doped ZnO sensing membranes deposited on Si substrates by radio frequency sputtering. The structural, morphological, and compositional features of these deposited films with multitemperature annealing were studied using X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy, respectively. Sensitivity, linearity, hysteresis, and drift rate were measured to determine the sensing and reliability performance of all fabricated devices. Compared to the ZnO electrolyte-insulator-semiconductor (EIS), the Ti-doped ZnO EIS sensor annealed at 700 degrees C exhibits a higher sensitivity of 57.56 mV/pH, lower hysteresis of 2.79 mV, and lower drift rate of 0.29 mV/h. For Ti-doped ZnO, sensitivities of 3.62 mV/mM and 6.42 mV/mM were obtained for urea and glucose sensing, respectively. The improvements are owing to Ti-doping, which produces a rougher sensing surface, a well-crystallized grain structure, and thinner silicate and SiO2 at the silicon-oxide interface.
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