High carrier mobility low-voltage thin film transistors fabricated at a low temperature via solution processing

Wide-bandgap ZnO TFTs have many potential applications in large-area, flexible electronics and transparent devices because of their low cost, high performance and excellent optical transmittance. High-performance ZnO TFTs fabricated via simple solution processing have been widely studied. However, the key issues of solutionprocessable ZnO TFTs are the relatively high processing temperature (> 300 degrees C) and the high operating voltage for achieving the desired electrical properties. Here, we successfully fabricated low-voltage ZnO TFTs at an annealing temperature of <= 250 degrees C. The resulting ZnO transistors with high-k terpolymer P(VDF-TrFE-CFE) showed a mobility of up to 5.3 cm(2) V-1 s(_1) and an on/off ratio of > 10(5) at 3 V. Furthermore, the influence of the dielectric constant on the carrier mobility was investigated. A lower k-value dielectric resulted in a high carrier mobility under the same carrier density. Therefore, with a low-k CYTOP dielectric applied to modify the interface between the ZnO semiconductor and the P(VDF-TrFE-CFE) layer, ZnO transistors annealed at 250 degrees C showed an electron mobility of 13.6 cm(2) V-1 s(_1) and an on/off ratio of > 10(5) at 3 V. To the best of our knowledge, this mobility is the highest value reported to date among the low-voltage solution-processable undoped ZnO TFTs annealed at temperatures of < 300 degrees C.