期刊
2015 IEEE INTERNATIONAL WORKSHOP ON INTEGRATED POWER PACKAGING (IWIPP)
卷 -, 期 -, 页码 72-74出版社
IEEE
关键词
Medium Voltage; High Voltage; Silicon Carbide; MOSFET; IGBT
Recent developments in 3.3 kV to 15 kV 4H-SiC MOSFETs are discussed, and device merits are compared to traditional Silicon IGBT technology, as well as 15 kV SiC n-IGBTs. Performance near theoretical limits was achieved for the 4H-SiC MOSFETs; bipolar 4H-SiC devices were analyzed and were found to handle higher currents at low frequencies.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据