Superconducting epitaxial YBa2Cu3O7-delta on SrTiO3-buffered Si(001)

Thin films of optimally doped(001)-oriented YBa2Cu3O7-delta are epitaxially integrated on silicon(001) through growth on a single crystalline SrTiO3 buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the SrTiO3 buffer enables high quality YBa2Cu3O7-delta films exhibiting high transition temperatures to be integrated on Si. For a 30-nm thick SrTiO3 buffer, 50-nm thick YBa2Cu3O7-delta films that exhibit a transition temperature of similar to 93 K, and a narrow transition width (<5K) are achieved. The integration of single crystalline YBa2Cu3O7-delta on Si(001) paves the way for the potential exploration of cuprate materials in a variety of applications.