A High Temperature Comparator in CMOS SiC

This paper demonstrates the first reported high temperature voltage comparator in CMOS silicon carbide. The comparator was designed in a 1.2 mu m CMOS SiC process and has been tested for a voltage supply of 12 V to 15 V. The rail to rail voltage comparator has been tested up to 450 degrees C with rise and fall times of 31 ns and 22 ns respectively, and positive and negative propagation delays of 108 ns and 107 ns respectively.