4.6 Article

Interfacial thermal conductance across metal-insulator/semiconductor interfaces due to surface states

期刊

PHYSICAL REVIEW B
卷 93, 期 8, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.93.085433

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资金

  1. National Natural Science Foundation of China [11334007]
  2. program for New Century Excellent Talents in Universities [NCET-13-0431]
  3. Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning [TP2014012]
  4. DARPA [FA8650-15-1-7524]
  5. Grants-in-Aid for Scientific Research [26400381] Funding Source: KAKEN

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We point out that the effective channel for the interfacial thermal conductance, the inverse of Kapitza resistance, of metal-insulator/semiconductor interfaces is governed by the electron-phonon interaction mediated by the surface states allowed in a thin region near the interface. Our detailed calculations demonstrate that the interfacial thermal conductance across Pb/Pt/Al/Au-diamond interfaces are only slightly different among these metals, and reproduce well the experimental results of the interfacial thermal conductance across metal-diamond interfaces observed by Stoner et al. [Phys. Rev. Lett. 68, 1563 (1992)] and most recently by Hohensee et al. [Nat. Commun. 6, 6578 (2015)].

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