期刊
RSC ADVANCES
卷 6, 期 20, 页码 16243-16249出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5ra24154e
关键词
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资金
- National Natural Science Foundation of China [61076006, 61377031]
- Flat-Panel Display Special Project of China's 863 Plan [2008AA03A335]
Organic-inorganic hybrid perovskite materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials, which make organic-inorganic hybrid perovskite materials good substitutes in all the applications put forth for organic materials and extend their application to higher speed devices than is presently possible with either a-Si or organic semiconductors. Recent reports have shown high carrier mobility and long electron-hole diffusion lengths of organic-inorganic hybrid perovskite materials. We have demonstrated a thin-film field-effect transistor with an organic-inorganic hybrid CH3NH3PbI3 material as the semiconducting channel based on these advantages via a low-temperature vapor-assisted solution process. The obvious electrical field effect is obtained in organic-inorganic hybrid CH3NH3PbI3 perovskite TFTs with a field-effect mobility of 396.2 cm(2) V-1 s(-1), current modulation greater than 104, sub-threshold current of 0.4035 V per decade and threshold voltage of -3.501 V.
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