Organic-inorganic hybrid CH3NH3PbI3 perovskite materials as channels in thin-film field-effect transistors

Organic-inorganic hybrid perovskite materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials, which make organic-inorganic hybrid perovskite materials good substitutes in all the applications put forth for organic materials and extend their application to higher speed devices than is presently possible with either a-Si or organic semiconductors. Recent reports have shown high carrier mobility and long electron-hole diffusion lengths of organic-inorganic hybrid perovskite materials. We have demonstrated a thin-film field-effect transistor with an organic-inorganic hybrid CH3NH3PbI3 material as the semiconducting channel based on these advantages via a low-temperature vapor-assisted solution process. The obvious electrical field effect is obtained in organic-inorganic hybrid CH3NH3PbI3 perovskite TFTs with a field-effect mobility of 396.2 cm(2) V-1 s(-1), current modulation greater than 104, sub-threshold current of 0.4035 V per decade and threshold voltage of -3.501 V.