期刊
APL MATERIALS
卷 4, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4945586
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- LabEx Minos [ANR-10-LABX-55-01]
- French Recherches Technologiques de Base (Basis Technological Research) and RENATECH programs
Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of the intensity of almost a factor 2.5. Hall effect measurements show an electron mobility enhancement from 200 to 2000 cm(2)/V s. The GaAs layers directly grown on industrial platform with no APBs are perfect candidates for being integrated as active layers for nanoelectronic as well as optoelectronic devices in a CMOS environment. (C) 2016 Author(s).
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