期刊
JOURNAL OF SEMICONDUCTORS
卷 37, 期 5, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1674-4926/37/5/053001
关键词
SnS; thin films; chemical bath deposition; dip coating; SILAR
资金
- Department of Atomic Energy (DAE)-BRNS, Mumbai, India through DAE-BRNS Major Research Project [2010/34/34/BRNS/2060]
The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 degrees C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.
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