期刊
APPLIED SURFACE SCIENCE
卷 434, 期 -, 页码 1074-1078出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2017.11.026
关键词
Amorphous MgO; Mg deficiency; Rough surface; Low power; High uniformity; Resistive switching
类别
资金
- National Natural Science Foundation of China [11574071]
Saving energy and reducing operation parameter fluctuations remain crucial for enabling resistive random access memory (RRAM) to emerge as a universal memory. In this work, we report a resistive memory device based on an amorphous MgO (a-MgO) film that not only exhibits ultralow programming voltage (just 0.22 V) and low power consumption (less than 176.7 mu W) but also shows excellent operative uniformity (the coefficient of variation is only 1.7% and 2.2% for SET and RESET voltage, respectively). Moreover, it also shows a forming-free characteristic. Further analysis indicates that these distinctive properties can be attributed to the unstable local structures and the rough surface of the Mg-deficient a-MgO film. These findings show the potential of using a-MgO in high-performance nonvolatile memory applications. (C) 2017 Elsevier B.V. All rights reserved.
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