期刊
APPLIED SURFACE SCIENCE
卷 427, 期 -, 页码 215-226出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2017.08.182
关键词
Silicon; Nanowires; Chemical etching; Gas sensors
类别
资金
- National Research Foundation of Korea (NRF) - Ministry of Education [2016R1A6A1A03013422]
- National Research Foundation of Korea [2016R1A6A1A03013422] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
In this study, a peculiar configuration for a gas sensor consisting of vertically aligned silicon nanowires (VA-Si NWs) synthesized by metal-assisted chemical etching (MACE) is reported. Si NWs were prepared via a facile MACE method and subsequent thermal annealing. Etching was performed by generation of silver nanoparticles (Ag NPs) and subsequent etching in HF/H2O2 aqueous solution; the growth conditions were optimized by changing the process parameters. Highly vertically oriented arrays of Si NWs with a straight-line morphology were obtained, and a top-top electrode configuration was applied. The VA-Si NW gas sensor showed good sensing performance, and the VA-Si NWs exhibited a remarkable response (R-g/R-a = 11.5 similar to 17.1) to H-2 gas (10-50 ppm) at 100 degrees C which was the optimal working temperature. The formation mechanism and gas sensing mechanism of VA-Si NWs are described. The obtained results can suggest new approaches to making inexpensive, versatile, and portable sensors based on Si NWs having a novel top-top electrode structure that are fully compatible with well-developed Si technologies. (c) 2017 Elsevier B.V. All rights reserved.
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