4.7 Article

Fast synthesis of high-quality large-area graphene by laser CVD

期刊

APPLIED SURFACE SCIENCE
卷 445, 期 -, 页码 204-210

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2018.03.184

关键词

Laser CVD; Fast synthesis; High-quality; Layer number; Defect

资金

  1. National Natural Science Foundation of China [51372188, 11602251, 51521001]
  2. 111 Project [B13035]
  3. International Science & Technology Cooperation Program of China [2014DFA53090]
  4. Natural Science Foundation of Hubei Province, China [2016CFA006]
  5. Fundamental Research Funds for the Central Universities [WUT: 2017II43GX, 2017III032, 2017YB004]
  6. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing (WUT) [2017-KF-5]
  7. [TZ2016001]

向作者/读者索取更多资源

Few layer graphene (FLG) has attracted tremendous interest in recent years because of its unique properties. However, how to synthesize graphene quickly and control the layer number is an important issue. Herein, high-quality and layer-controlled graphene was obtained on polycrystalline nickel foil by laser chemical vapor deposition (LCVD) within a few minute, which is a cold-wall CVD type based on irradiation of a continuous wave laser with Super-Gaussian distribution spot. The number of graphene layers and quality was controlled by controlling the growth time, laser power and cooling rate. The growth mechanism of the FLG has also been discussed. (C) 2018 Elsevier B.V. All rights reserved.

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